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BTS555 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BTS555 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 16 page Data Sheet BTS555 Infineon Technologies AG 3 2010-June-01 Thermal Characteristics Parameter and Conditions Symbol Values Unit min typ max Thermal resistance chip - case: RthJC7) -- -- 0.35 K/W junction - ambient (free air): RthJA -- 30 -- Electrical Characteristics Parameter and Conditions Symbol Values Unit at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (Tab to pins 1,5, see measurement circuit page 7) IL = 30 A, Tj = 25 °C: VIN = 0, IL = 30 A, Tj = 150 °C: RON -- -- 1.9 3.3 2.5 4.0 m Ω IL = 120 A, Tj = 150 °C: -- -- 4.0 Vbb = 6 V8), IL = 20 A, Tj = 150 °C: RON(Static) -- 4.6 9.0 Nominal load current9) (Tab to pins 1,5) ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 10) IL(ISO) 128 165 -- A Maximum load current in resistive range (Tab to pins 1,5) VON = 1.8 V, Tc = 25 °C: see diagram on page 13 VON = 1.8 V, Tc = 150 °C: IL(Max) 520 360 -- -- -- -- A Turn-on time11) IIN to 90% VOUT: Turn-off time IIN to 10% VOUT: RL = 1 Ω , Tj =-40...+150°C ton toff 120 50 -- -- 600 200 µs Slew rate on 11) (10 to 30% VOUT ) RL = 1 Ω dV/dton 0.3 0.5 0.8 V/ µs Slew rate off 11) (70 to 40% VOUT ) RL = 1 Ω -dV/dtoff 0.3 0.7 1 V/ µs 7) Thermal resistance RthCH case to heatsink (about 0.25 K/W with silicone paste) not included! 8 ) Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C. 9) not subject to production test, specified by design 10) TJ is about 105°C under these conditions. 11 ) See timing diagram on page 14. |
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