HITFET - BTS3046SDL

Smart low side power switch

General Product Characteristics

Datasheet

7

Rev. 1.0, 2009-12-06

4

General Product Characteristics

4.1

Absolute Maximum Ratings

Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are

not designed for continuous repetitive operation

4.2

Functional Range

T

(unless otherwise specified)

1) Not subject to production test, specified by design.

Pos.

Parameter

Symbol Limit Values Unit

Test Conditions

Min.

Max.

Voltages

4.1.1

Drain voltage

V

D

–60

V

2) Active clamped.

4.1.2

Drain voltage for short circuit protection

V

D(SC)

–36

V

V

4.1.3

Input Current

I

IN

self limited

mA

-0.2 V <

V

-2

2

mA

V

or

V

4.1.4

Drain Current

I

D

–10

A

3)

3) Active limited

Energies

4.1.5

Unclamped single pulse inductive energy

single pulse

E

AS

–140

mJ

I

V

T

Temperatures

4.1.6

Operating temperature

T

J

-40

+150

°C–

4.1.7

Storage temperature

T

STG

-55

+150

°C–

ESD Susceptibility

4.1.8

ESD Resistivity

-2

2

kV

4) ESD susceptibility, HBM according to EIA/JESD 22-A114, Pin Source connected to Ground

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Max.

4.2.1

Input pin voltage (device ON)

V

IN

210

V

–

4.2.2

Drain voltage

V

D

2.5

36

V

–