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BTS6163D Datasheet(PDF) 10 Page - Infineon Technologies AG |
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BTS6163D Datasheet(HTML) 10 Page - Infineon Technologies AG |
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10 / 18 page  PROFET® BTS 6163 D Data Sheet 10 of 18 Rev. 1.0, 2007-07-23 Reversave (Reverse battery protection) Logic IN IS R OUT L R Power GND Signal GND Vbb - Power Transistor IN R bb R D RIS typ. 1 kΩ. Add RIN for reverse battery protection in applications with Vbb above 16V; recommended value: = + IS IN R R 1 1 V V A bb 12 | | 08 . 0 − To minimise power dissipation at reverse battery operation, the overall current into the IN and IS pin should be about 80mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through RIS. Since the current via Rbb generates additional heat in the device, this has to be taken into account in the overall thermal consideration. Inverse load current operation PROFET V IN OUT IS bb Vbb VOUT - IL R IS V IS V IN + - + - IIS The device can be operated in inverse load current mode (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). In case of inverse operation the intrinsic drain source diode is eventually conducting resulting in considerably increased power dissipation. The transition from inverse to forward mode can result in a delayed switch on. Note: Temperature protection during inverse load current operation is not possible! Vbb disconnect with energised inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL+VD<63 V if RIN = 0). For higher clamp voltages currents at IN and IS have to be limited to 120 mA. Version a: PROFET V IN OUT IS bb V bb VZL V D |
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Similar Description - BTS6163D |
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