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BTS50055-1TMB Datasheet(PDF) 9 Page - Infineon Technologies AG |
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BTS50055-1TMB Datasheet(HTML) 9 Page - Infineon Technologies AG |
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9 / 18 page  Data Sheet BTS50055-1TMB Infineon Technologies AG Page 9 2010-April-27 Over voltage protection of logic part + Vbb VOUT IN bb R Signal GND Logic PROFET V Z,IS RIS IN R IS V Z,IN RV V Z,VIS Rbb = 120 Ω typ., VZ,IN = VZ,IS = 66V typ., RIS = 1kΩ nominal. Note that when over voltage exceeds 71 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used. Reverse battery protection Logic IS IN IS R V R OUT L R Power GND Signal GND Vbb - Power Transistor IN R bb R D S D RV ≥ 1 kΩ, RIS = 1 kΩ nominal. Add RIN for reverse battery protection in applications with Vbb above 16 V18); recommended value: 1 RIN + 1 RIS + 1 RV = 0.1A |Vbb| - 12V if DS is not used (or 1 RIN = 0.1A |Vbb| - 12V if DS is used). To minimize power dissipation at reverse battery operation, the summarized current into the IN and IS pin should be about 120mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through RIS and RV. Vbb disconnect with energized inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL < 72 V or VZb < 30 V if RIN=0). For higher clamp voltages currents at IN and IS have to be limited to 250 mA. Version a: PROFET V IN OUT IS bb V bb VZL Version b: PROFET V IN OUT IS bb V bb VZb Note that there is no reverse battery protection when using a diode without additional Z-diode VZL, VZb. Version c: Sometimes a necessary voltage clamp is given by non inductive loads RL connected to the same switch and eliminates the need of clamping circuit: PROFET V IN OUT IS bb V bb R L |
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