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PESD1LIN Datasheet(PDF) 1 Page - NXP Semiconductors |
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PESD1LIN Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 12 page 1. Product profile 1.1 General description PESD1LIN in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package designed to protect one automotive Local Interconnect Network (LIN) bus line from the damage caused by ElectroStatic Discharge (ESD) and other transients. 1.2 Features and benefits ESD protection of one automotive LIN-bus line Asymmetrical diode configuration ensures an optimized protection against ElectroMagnetic Interferences (EMI) of a LIN Electronic Control Unit (ECU) Max. peak pulse power: PPP =160 W at tp =8/20 s Low clamping voltage: VCL =40V at IPP =1A Ultra low leakage current: IRM <1nA ESD protection of up to 23 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); IPP =3A at tp =8/20 s AEC-Q101 qualified 1.3 Applications LIN-bus protection Automotive applications 1.4 Quick reference data PESD1LIN LIN-bus ESD protection diode Rev. 3 — 31 May 2011 Product data sheet Table 1. Quick reference data Tamb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VRWM reverse standoff voltage PESD1LIN (15 V) - - 15 V PESD1LIN (24 V) - - 24 V Cd diode capacitance VR =0V; f=1MHz -13 17 pF |
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