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PMEG2005AELD Datasheet(PDF) 9 Page - NXP Semiconductors |
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PMEG2005AELD Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 14 page PMEG2005AELD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 10 May 2011 9 of 14 NXP Semiconductors PMEG2005AELD 20 V, 0.5 A low VF MEGA Schottky barrier rectifier 8. Test information The current ratings for the typical waveforms as shown in Figure 10, 11, 12 and 13 are calculated according to the equations: with IM defined as peak current, at DC, and with IRMS defined as RMS current. 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. (1) IR =1mA Fig 14. Reverse recovery time test circuit and waveforms trr (1) + IF t output signal tr tp t 10 % 90 % VR input signal V = VR + IF × RS RS = 50 Ω IF D.U.T. Ri = 50 Ω SAMPLING OSCILLOSCOPE mga881 Fig 15. Duty cycle definition t1 t2 P t 006aaa812 duty cycle δ = t1 t2 I FAV () I M δ × = I RMS I FAV () = I RMS I M δ × = |
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