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SKT11 Datasheet(PDF) 1 Page - Semikron International |
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SKT11 Datasheet(HTML) 1 Page - Semikron International |
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1 / 4 page  SKT 11,9 Qu RG sold Ag /18 © by SEMIKRON Rev. 1 – 19.02.2010 1 THYRISTOR SKT IT(DC) = 150 A VRRM = 1800 V Size: 11,9 mm x 11,9 mm Corner gate SKT 11,9 Qu RG sold Ag /18 Features • high current density due to double mesa technology • high surge current • compatible to all standard solder processes Typical Applications* • conrolled rectifier circuits • solid state relays Absolute Maximum Ratings Symbol Conditions Values Unit VRRM Tj =25°C, IR =0.2 mA 1800 V VDRM Tj =25°C, ID =0.2 mA 1800 V IT(AV) Tc =80°C, Tj = 130 °C 115 A ITSM Tj = 130 °C, 10 ms, sin 180° 1900 A i2t Tj = 130 °C, 10 ms, sin 180° 18050 A2s Tjmax 130 °C Electrical Characteristics Symbol Conditions min. typ. max. Unit VT Tj = 130 °C, IT = 150 A 1.2 V VT(TO) Tj = 130 °C 0.85 V rT Tj = 130 °C 2.4 mΩ IGT Tj =25°C 100 mA VGT Tj =25°C 1.98 V IGD Tj = 115 °C 6mA VGD Tj = 130 °C 0.25 V IH Tj =25°C 220 mA IL Tj =25°C 550 mA Dynamic Characteristics Symbol Conditions min. typ. max. Unit tq Tj = 130 °C 200 µs (di/dt)cr Tj = 130 °C 140 A/µs (dv/dt)cr Tj = 130 °C 1000 V/µs Thermal Characteristics Symbol Conditions min. typ. max. Unit Tj -40 130 °C Tstg -40 130 °C Tsolder 255 °C Rth(j-c) typical assembly 0.28 K/W Mechanical Characteristics Symbol Conditions Values Unit Raster size 11.9 x 11.9 mm2 Area total 141.61 mm2 Anode solderable (Ag/Ni) Gate and Cathode solderable (Ag/Ni) Wire bond Package tray Chips / Package 36 pcs |
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