NCP4682DMU18TCG datasheet(1/6 Pages) ONSEMI

Part #	NCP4682DMU18TCG

Description	150 mA, Ultra Low Supply Current, Low Dropout Regulator

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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July, 2011 − Rev. 1

1

Publication Order Number:

NVTFS5820NL/D

NVTFS5820NL

Power MOSFET

60 V, 11.5 mW, Single N−Channel, m8FL

Features

• Small Footprint (3.3x3.3 mm) for Compact Design

• Low RDS(on) to Minimize Conduction Losses

• Low QG and Capacitance to Minimize Driver Losses

• AEC−Q101 Qualified

• These are Pb−Free Devices*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

60

V

Gate−to−Source Voltage

VGS

"20

V

Continuous Drain Cur-

rent RYJ−mb (Notes 1,

2, 3, 4)

Steady

State

Tmb = 25°C

ID

29

A

Tmb = 100°C

20

Power Dissipation

RYJ−mb (Notes 1, 2, 3)

Tmb = 25°C

PD

21

W

Tmb = 100°C

10

Continuous Drain Cur-

rent RqJA (Notes 1 &

3, 4)

Steady

State

TA = 25°C

ID

11

A

TA = 100°C

8.0

Power Dissipation

RqJA (Notes 1, 3)

TA = 25°C

PD

3.2

W

TA = 100°C

1.6

Pulsed Drain Current

TA = 25°C, tp = 10 ms

IDM

247

A

Current limited by package

(Note 4)

TA = 25°C

IDmaxPkg

70

A

Operating Junction and Storage Temperature

TJ, Tstg

−55 to

175

°C

Source Current (Body Diode)

IS

17

A

Single Pulse Drain−to−Source Avalanche

Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,

IL(pk) = 37 A, L = 0.1 mH, RG = 25 W)

EAS

48

mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

Unit

Junction−to−Mounting Board (top) − Steady

State (Note 2, 3)

RYJ−mb

7.3

°C/W

Junction−to−Ambient − Steady State (Note 3)

RqJA

47

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.

4. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

ORDERING INFORMATION

http://onsemi.com

Device

Package

Shipping†

V(BR)DSS

RDS(on) MAX

ID MAX

60 V

11.5 mW @ 10 V

29 A

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

WDFN8

(m8FL)

CASE 511AB

MARKING DIAGRAM

15 mW @ 4.5 V

NVTFS5820NLTAG

WDFN8

(Pb−Free)

1500/Tape &

Reel

(Note: Microdot may be in either location)

1

5820

= Specific Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

1

NVTFS5820NLTWG

WDFN8

(Pb−Free)

5000/Tape &

Reel

5820

AYWWG

G

D

S

G

N−Channel

D

S

G

*For additional information on our Pb−Free strategy and

soldering details, please download the ON

Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

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