BUL76B datasheet(2/2 Pages) SEME-LAB

Part #	BUL76B

Description	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

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Manufacturer	SEME-LAB [Seme LAB]

Direct Link	http://www.semelab.co.uk

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BUL76B

LAB

SEME

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 2/97

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCEO(sus)

V(BR)CBO

V(BR)EBO

ICBO

ICEO

IEBO

hFE*

VCE(sat)*

VBE(sat)*

ft

Cob

Collector – Emitter Sustaining Voltage

Collector – Base Breakdown Voltage

Emitter – Base Breakdown Voltage

Collector – Base Cut–Off Current

Collector – Emitter Cut–Off Current

Emitter Cut–Off Current

DC Current Gain

Collector – Emitter Saturation Voltage

Base – Emitter Saturation Voltage

Transition Frequency

Output Capacitance

100

250

10

100

10

100

45

90

25

60

50

80

40

70

0.5

0.8

0.7

1.2

1.5

20

200

V

µA

—

V

MHz

pF

IC = 100mA

IC = 1mA

IE = 1mA

VCB = 240V

TC = 125°C

VCE = 90V

VEB = 9V

TC = 125°C

IC = 1A

VCE = 1V

IC = 15A

VCE = 1V

IC = 10A

VCE = 5V

IC = 18A

VCE = 5V

IC = 10A

IB = 1A

IC = 20A

IB = 2A

IC = 20A

IB = 4A

IC = 10A

IB = 1A

IC = 20A

IB = 2A

IC = 0.2A

VCE = 4V

VCB = 10V

f = 1MHz

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

* Pulse test tp = 300µs , δ < 2%

ELECTRICAL CHARACTERISTICS

DYNAMIC CHARACTERISTICS

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