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SDT05S60 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SDT05S60 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page 200 8-06-02 Rev. 2. 2 Page 1 SDT05S60 SDT05S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery Product Summary VRRM 600 V Qc 14 nC IF 5 A P G-TO220-2-2. Pin 1 Pin 2 C A Type Package Ordering Code SDT05S60 P G-TO220-2-2. Q67040S4644 Marking D05S60 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous forward current, T C=100°C IF 5 A RMS forward current , f=50Hz IFRMS 7.1 Surge non repetitive forward current, sine halfwave TC=25°C, tp=10ms IFSM 18.5 Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM 21 Non repetitive peak forward current tp=10µs, TC=25°C IFMAX 50 i 2t value , T C=25°C, tp=10ms i2dt 1.7 A²s Repetitive peak reverse voltage VRRM 600 V Surge peak reverse voltage VRSM 600 Power dissipation , T C=25°C Ptot 43 W Operating and storage temperature Tj , Tstg -55... +175 °C |
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