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2SA1576A Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SA1576A Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Elektronische Bauelemente 2SA1576A -0.15A, -60V PNP Silicon Epitaxial Paner Transistors 07-Jan-2011 Rev. C Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H J F K E 1 2 3 1 2 3 1 Base 2 Emitter Collector 3 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The 2SA1576A is designed for use in driver stage of AF amplifier and general purpose amplificaion. FEATURES Complements of the 2SC4081 Excellent hFE Linearity CLASSIFICATION OF hFE Product-Rank 2SA1576A-Q 2SA1576A-R 2SA1576A-S Range 120~270 180~390 270~560 Marking FQ FR FS PACKAGE INFORMATION Package MPQ LeaderSize SOT-323 3K 7’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Collector Current IC -150 mA Collector Power Dissipation PC 200 mW Junction & Storage temperature TJ, TSTG 150, -55 ~ 150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-Base Breakdown Voltage V(BR)CBO -60 - - V IC=-50µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -50 - - V IC=-1mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO -6 - - V IE=-50µA, IC=0 Collector Cut-Off Current ICBO - - 0.1 µ A VCB=-60V, IE=0 Emitter Cut-off Current IEBO 0.1 µ A VEB=-6V, IC=0 DC Current Gain hFE 120 - 560 VCE=-6V, IC=-1mA Collector-Emitter Saturation Voltage VCE(sat) - - -0.5 V IC=-50mA, IB=-5mA Transition Frequency fT - 140 - MHz VCE=-12V, IC=-2mA, f=30MHz Collector Output Capacitance Cob - 4 5 pF VCB=-12V, IE=0, f=1MHz SOT-323 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.25 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. F 0.20 0.40 |
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