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2SC4373 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC4373 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page  2SC4373 0.8 A , 120 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente 09-Jun-2011 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A E C D B K H F G L J 1 2 3 4 1 Base 3 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Small Flat Package. Large Current Capacity. CLASSIFICATION OF hFE PACKAGE INFORMATION Package MPQ Leader Size SOT-89 1K 7 inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 120 V Collector to Emitter Voltage VCEO 120 V Emitter to Base Voltage VEBO 5 V Continuous Collector Current IC 800 mA Collector Power Dissipation PC 500 mW Thermal Resistance Junction to Ambient RθJA 250 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test condition Collector to Base Breakdown Voltage V(BR)CBO 120 - - V IC=1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 120 - - V IC=10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=1mA, IC=0 Collector Cut-Off Current ICBO - - 0.1 µA VCB=120 V, IE=0 Emitter Cut-Off Current IEBO - - 0.1 µA VEB=5V, IC=0 DC Current Gain hFE 80 - 240 VCE=5V, IC=100mA Collector to Emitter Saturation Voltage VCE(sat) - - 1 V IC=500mA, IB=50mA Base to emitter Voltage VBE - - 1 V VCE=5V, IC=500mA Transition Frequency fT - 120 - MHz VCE=5V, IC=500mA Collector Output Capacitance Cob - - 30 pF VCB=10V, IE=0 , f=1MHz Product-Rank 2SC4373-O 2SC4373-Y Range 80~160 120~240 Marking CO CY SOT-89 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 4.40 4.60 G 0.40 0.58 B 3.94 4.25 H 1.50 TYP C 1.40 1.60 J 3.00 TYP D 2.30 2.60 K 0.32 0.52 E 1.50 1.70 L 0.35 0.44 F 0.89 1.20 |
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