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1N3174 Datasheet(PDF) 1 Page - Microsemi Corporation |
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1N3174 Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 3 page  TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SILICON POWER RECTIFIER Qualified per MIL-PRF-19500/211 • Glass Passivated Die • Glass to Metal Header Construction • Rugged Construction • High Surge Current Capability T4-LDS-0140 Rev. 1 (091750) Page 1 of 3 DEVICES LEVELS 1N3164 1N3172 1N3164R 1N3172R JAN 1N3168 1N3174 1N3168R 1N3174R JANTX 1N3170 1N3170R JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Peak Repetitive Reverse Voltage 1N3164 1N3168 1N3170 1N3172 1N3174 1N3164R 1N3168R 1N3170R 1N3172R 1N3174R VRWM 200 400 600 800 1000 V Average Forward Current, TC = 150° IF 200 A Average Forward Current, TC = 120° IF 300 A Peak Surge Forward Current @ tp = 8.3ms, half sinewave, TC = 200°C IFSM 6250 A Thermal Resistance, Junction to Case RθJC 0.20 °C/W Typical Thermal Resistance RθCS 0.80 °C/W Operating Case Temperature Range Tj -65°C to 200°C °C Storage Temperature Range TSTG -65°C to 200°C °C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit Forward Voltage IFM = 940A, TC = 25°C VFM 1.55 V Reverse Current VRM = 200, TC = 25°C VRM = 400, TC = 25°C VRM = 600, TC = 25°C VRM = 800, TC = 25°C VRM = 1000, TC = 25°C 1N3164 1N3168 1N3170 1N3172 1N3174 1N3164R 1N3168R 1N3170R 1N3172R 1N3174R IRM 10 mA Reverse Current VRM = 200, TC = 175°C VRM = 400, TC = 175°C VRM = 600, TC = 175°C VRM = 800, TC = 175°C VRM = 1000, TC = 175°C 1N3164 1N3168 1N3170 1N3172 1N3174 1N3164R 1N3168R 1N3170R 1N3172R 1N3174R IRM 30 mA Note: DO-205AB (DO-9) |
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