 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
BQ77910 Datasheet(PDF) 11 Page - Texas Instruments |
|
||||||||||||||||||||||||||||||
BQ77910 Datasheet(HTML) 11 Page - Texas Instruments |
|
|
11 / 56 page  bq77910 www.ti.com SLUSA07B – AUGUST 2010 – REVISED MAY 2011 PROGRAMMABLE PROTECTION FUNCTIONS The bq77910 provides the following types of protection functions: • Cell overvoltage • Cell undervoltage • Discharge overcurrent • Discharge-current short circuit • Charge-current short circuit All of the voltage/current and time-delay thresholds can be adjusted for a specific application by programming the EEPROM settings of the IC. The ranges available are shown in Table 1. CAUTION Only a maximum of three EEPROM write cycles per byte should performed to ensure long-term data retention stability. (For circuit development purposes, the EEPROM may be rewritten many times.) Table 1. Detection Voltage, Detection Delay Time Summary PARAMETER RANGE MIN MAX STEP (EEPROM Selected) Overvoltage Cell voltage 2.8 V 4.375 V 25 mV Delay 0.5 s 2.25 s 0.25 s Hysteresis 0 mV 300 mV 25 mV or 50 mV Undervoltage Cell voltage 1.4 V 2.9 V 100 mV Delay 500 ms 32 s Binary spacing Hysteresis 400 mV 1600 mV 400 mV Discharge overcurrent SENSE( –) pin voltage with Low 25 mV 100 mV 5 mV respect to SENSE(+) High 125 mV 500 mV 25 mV Delay 20 ms 300 ms 20 ms 400 ms 2000 ms 100 ms Discharge short circuit SENSE( –) pin voltage with Low 40 mV 190 mV 10 mV respect to SENSE(+) High 200 mV 950 mV 50 mV Delay Fast 60 µs 960 µs 60 µs Slow 50 ms 1500 ms 50 ms or 100 ms Charge short circuit SENSE( –) pin voltage with Low –10 mV –85 mV 5 mV respect to SENSE(+) High –50 mV –425 mV 25 mV Delay 60 µs 960 µs 60 µs Cell Overvoltage Detection and Recovery The CHG FET is turned off if any one of the cell voltages remains higher than VOV for a period greater than tOV. As a result, the cells are protected from an overcharge condition. After an overvoltage event occurs, the all cells must relax to less than (VOV – VHYST) to allow recovery. The VOV, tOV, and VHYST values are settable via EEPROM bits OVT, OVD and OVH. Cell Undervoltage Detection and Recovery When any one of the cell voltages falls below VUV, for a period of tUV, the bq77910 enters the undervoltage protection state. The DSG FET is turned off, and depending on configuration, the device could enter the SHUTDOWN mode. Both VUV and tUV can be configured via EEPROM bits UVT and UVD. The recovery (fault release) is controlled by the EEPROM configuration bit UV_REC. Copyright © 2010–2011, Texas Instruments Incorporated Submit Documentation Feedback 11 Product Folder Link(s): bq77910 |
Similar Part No. - BQ77910 |
|
Similar Description - BQ77910 |
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
