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APT60GL120JU3 Datasheet(PDF) 2 Page - Microsemi Corporation |
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APT60GL120JU3 Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 5 page  APT60GL120JU3 www.microsemi.com 2- 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1200V 250 µA Tj = 25°C 1.85 2.25 VCE(sat) Collector Emitter saturation Voltage VGE = 15V IC = 50A Tj = 150°C 2.25 V VGE(th) Gate Threshold Voltage VGE = VCE , IC = 1.6mA 5.0 5.8 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 2770 Coes Output Capacitance 205 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 160 pF QG Gate charge VGE= ±15V ; VCE=600V IC=50A 0.38 µC Td(on) Turn-on Delay Time 130 Tr Rise Time 20 Td(off) Turn-off Delay Time 300 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 50A RG = 8.2Ω 45 ns Td(on) Turn-on Delay Time 150 Tr Rise Time 35 Td(off) Turn-off Delay Time 350 Tf Fall Time Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 50A RG = 8.2Ω 80 ns TJ = 25°C 3.8 Eon Turn-on Switching Energy TJ = 150°C 5.5 mJ TJ = 25°C 2.5 Eoff Turn-off Switching Energy VGE = ±15V VCE = 600V IC = 50A RG = 8.2Ω TJ = 150°C 4.5 mJ Isc Short Circuit data VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C 200 A Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 100 IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 500 µA IF DC Forward Current Tc = 80°C 30 A IF = 30A 2.6 3.1 IF = 60A 3.2 VF Diode Forward Voltage IF = 30A Tj = 125°C 1.8 V Tj = 25°C 300 trr Reverse Recovery Time Tj = 125°C 380 ns Tj = 25°C 360 Qrr Reverse Recovery Charge IF = 30A VR = 800V di/dt =200A/µs Tj = 125°C 1700 nC |
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