MAXIMUM RATINGS

All Ratings: T

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

mark of Infineon Technologies AG"

Super Junction MOSFET

C

Power Semiconductors

O

APT77N60JC3

600V 77A

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

T

L

dt

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Drain-Source Voltage slope (V

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

V/ns

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Ohms

μA

nA

Volts

MIN

TYP

MAX

600

.030

0.035

1.0

50

500

±200

2.1

3

3.9

APT77N60JC3

600

77

231

±20

±30

568

4.55

-55 to 150

300

50

20

1

1800

• Ultra low R

• Low Miller Capacitance

• Ultra Low Gate Charge, Q

g

• Avalanche Energy Rated

• Popular SOT-227 Package

• N-Channel Enhancement Mode

Microsemi Website - http://www.microsemi.com

Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with

two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.

SOT-227

G

S

S

D

"UL Recongnized"

file # 145592

G

D

S