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APTGT300A60D3G Datasheet(PDF) 4 Page - Microsemi Corporation |
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APTGT300A60D3G Datasheet(HTML) 4 Page - Microsemi Corporation |
4 / 5 page APTGT300A60D3G www.microsemi.com 4- 5 Typical Performance Curve Output Characteristics (VGE=15V) TJ=25°C TJ=150°C 0 100 200 300 400 500 00.5 11.5 22.5 VCE (V) Output Characteristics VGE=15V VGE=13V VGE=19V VGE=9V 0 100 200 300 400 500 0 0.511.522.5 3 3.5 VCE (V) TJ = 150°C Transfert Characteristics TJ=25°C TJ=150°C 0 100 200 300 400 500 56 789 10 11 VGE (V) Energy losses vs Collector Current Eon Eoff Er 0 5 10 15 20 25 0 100 200 300 400 500 600 IC (A) VCE = 300V VGE = 15V RG = 2.2Ω TJ = 150°C Eon Eoff Er 0 5 10 15 20 25 30 35 0 2.5 5 7.5 10 12.5 15 Gate Resistance (ohms) VCE = 300V VGE =15V IC = 300A TJ = 150°C Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 700 VCE (V) VGE=15V TJ=150°C RG=2.2Ω maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.04 0.08 0.12 0.16 0.2 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds IGBT |
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