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APTGT300DA60D3G Datasheet(PDF) 5 Page - Microsemi Corporation |
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APTGT300DA60D3G Datasheet(HTML) 5 Page - Microsemi Corporation |
5 / 5 page APTGT300DA60D3G www.microsemi.com 5- 5 Forward Characteristic of diode TJ=25°C TJ=150°C 0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2 2.4 VF (V) Hard switching ZCS ZVS 0 20 40 60 80 0 100 200 300 400 IC (A) VCE=300V D=50% RG=2.2Ω TJ=150°C Tc=85°C Operating Frequency vs Collector Current maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds Diode Microsemi reserves the right to change, without notice, the specifications and information contained herein |
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