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LS4448 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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LS4448 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page LS4448 500 mW Hermetically Sealed Glass Fast Switching Diodes Elektronische Bauelemente 14-Apr-2011 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Fast Switching Device (TRR < 4.0nS) QUADRO Mini-MELF Package Surface Device Type Mounting Hermetically Sealed Glass Compression Bonded Construction All External Surfaces Are Corrosion Resistant And Terminals Are Readily Solderable Matte Tin (Sn) Lead Finish Color band Indicates Negative Polarity ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Value Unit Power Dissipation PD 500 mW Operating Junction and Storage Temperature Range TJ, TSTG 150, -65~150 °C Working Inverse Voltage WIV 75 V Average Rectified Current IO 150 mA Non-repetitive Peak Forward Current IFM 450 mA Peak Forward Surge Current IFSURGE 2 A Notes: 1. These ratings are limiting values above which the serviceability of the diode may be impaired. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Limits Unit Test Condition Min Max Breakdown Voltage BV 100 - V IR=100μA 75 - IR=5μA Reverse Leakage Current IR - 25 nA VR=20V - 5 μA VR=75V Forward Voltage VF 0.62 0.72 V IF=5mA - 1.0 IF=100mA Reverse Recovery Time TRR - 4 nS IF=IR=10mA RL=100Ω IRR=1mA - - Capacitance C - 4 pF VR=0, f=1MHz QUADRO (Mini-MELF) REF. Millimeter Min. Max. A 3.30 3.70 B 1.40 1.60 C 0.35 0.45 D 1.8 Typ. D A C C B Cathode Anode |
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