MAXIMUM RATINGS

All Ratings: T

RF POWER MOSFET

N - CHANNEL PUSH - PULL PAIR

165V

400W

100MHz

The ARF477FL is a matched pair of RF power transistors in a common source configuration. It is designed for high

voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 100 MHz.

•

Output Power = 400 Watts

•

Gain = 15dB (Class AB)

•

Efficiency = 50% min

for Superior Ruggedness.

ARF477FL

Common Source

Push-Pull Pair

G

G

D

S

S

S

S

D

Microsemi Website - http://www.microsemi.com

ARF477FL

Symbol

Parameter

Ratings

Unit

V

DSS

Drain-Source Voltage

500

V

V

DGO

Drain-Gate Voltage

500

I

D

Continuous Drain Current @ T

15

A

V

GS

Gate-Source Voltage

±30

V

P

D

Total Power Dissipation @ T

750

W

T

Operating and Storage Junction Temperature Range

-55 to 175

°C

T

L

Lead Temperature: 0.063” from Case for 10 Sec.

300

Static Electrical Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

BV

DSS

Drain-Source Breakdown Voltage (V

500

V

V

DS(ON)

2.9

4

I

DSS

Zero Gate Voltage Drain Current (V

25

μA

Zero Gate Voltage Drain Current (V

250

I

GSS

Gate-Source Leakage Current (V

±100

nA

g

fs

Forward Transconductance (V

3.5

5.6

8

mhos

g

Forward Transconductance Match Ratio (V

0.9

1.1

V

GS(TH)

Gate Threshold Voltage (V

35

V

GS(TH)

Gate Threshold Voltage Match (V

0.2

Volts

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Symbol

Parameter

Min

Typ

Max

Unit

R

θJC

Junction to Case

0.18

0.2

°C/W

R

θJHS

0.30

0.32

Thermal Characteristics