IRF250 datasheet(1/2 Pages) SEME-LAB

Part #	IRF250

Description	N-CHANNEL POWER MOSFET

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Manufacturer	SEME-LAB [Seme LAB]

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IRF250

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 9/96

39.95 (1.573)

max.

17.15 (0.675)

16.64 (0.655)

30.40 (1.197)

30.15 (1.187)

1

2

4.09 (0.161)

3.84 (0.151)

dia.

2 plcs.

20.32 (0.800)

18.80 (0.740)

dia.

1.57 (0.062)

1.47 (0.058)

dia.

2 plcs.

VGS

Gate – Source Voltage

ID

Continuous Drain Current

(VGS = 0 , Tcase = 25°C)

ID

Continuous Drain Current

(VGS = 0 , Tcase = 100°C)

IDM

Pulsed Drain Current 1

PD

Power Dissipation @ Tcase = 25°C

Linear Derating Factor

EAS

Single Pulse Avalanche Energy 2

IAR

Avalanche Current 2

EAR

Repetitive Avalanche Energy 2

dv/dt

Peak Diode Recovery 3

TJ , Tstg

Operating and Storage Temperature Range

TL

Lead Temperature

1.6mm (0.63”) from case for 10 sec.

±20V

30A

19A

120A

150W

1.2W/°C

200mJ

30A

15mJ

5V/ns

–55 to +150°C

300°C

MECHANICAL DATA

Dimensions in mm (inches)

N–CHANNEL

POWER MOSFET

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

FEATURES

• HERMETICALLY SEALED TO–3 METAL

PACKAGE

• SIMPLE DRIVE REQUIREMENTS

• SCREENING OPTIONS AVAILABLE

TO–3 Metal Package

Pin 1 – Gate

Pin 2 – Source

Case – Drain

Notes

1) Pulse Test: Pulse Width

≤ 300µs, δ≤ 2%.

2) @ VDD = 50V , L ≥ 330mH , RG = 25Ω , Peak IL = 30A , Starting TJ = 25°C.

3) @ ISD ≤ 30A , di/dt ≤ 190A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 2.35Ω

VDSS

200V

ID(cont)

30A

RDS(on)

0.085

Ω

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