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SMG2398NE Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SMG2398NE Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 2 page SMG2398NE 2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente 25-Nov-2010 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-Threshold Voltage VGS(th) 1.0 - - V VDS=VGS, ID= 250uA Gate-Body Leakage IGSS - - ±100 nA VDS= 0V, VGS= ±20V Zero Gate Voltage Drain Current IDSS - - 1 uA VDS= 48V, VGS= 0V - - 50 VDS= 48V, VGS= 0V, TJ= 55°C On-State Drain Current 1 ID(on) 10 - - A VDS = 5V, VGS= 10V Drain-Source On-Resistance 1 RDS(ON) - - 194 mΩ VGS= 10V, ID= 2.2A - - 273 VGS= 4.5V, ID= 1.8A Forward Transconductance 1 gfs - 8 - S VDS= 4.5V, ID= 2.2A Diode Forward Voltage VSD - - 1.2 V IS= 1.7A, VGS= 0V DYNAMIC 2 Total Gate Charge Qg - 4.0 - nC VDS= 30V, VGS= 5V, ID= 2.2A Gate-Source Charge Qgs - 4.0 - Gate-Drain Charge Qgd - 2.0 - Turn-on Delay Time Td(on) - 10 - nS VDD= 30V, VGEN= 10V, RL= 30, ID= 1A Rise Time Tr - 10 - Turn-off Delay Time Td(off) - 20 - Fall Time Tf - 10 - Source-Ddrain Reverse Recovery Time TRR - 50 - IF=1.7A, di/dt=100 A / uS Notes 1 Pulse test:PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. |
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