MB85R1001A datasheet(5/16 Pages) FUJITSU

Part #	MB85R1001A

Description	Memory FRAM CMOS 1 M Bit (128 K x 8)

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Manufacturer	FUJITSU [Fujitsu Component Limited.]

Direct Link	http://edevice.fujitsu.com/fmd/en/index.html

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MB85R1001A

DS501-00003-0v01-E

5

■ ELECTRICAL CHARACTERISTICS

1.

DC Characteristics

(within recommended operating conditions)

*1 : During the measurement of ICC, the Address, Data In were taken to only change once per active cycle.

Iout: output current

*2 : All pins other than setting pins should be input at the CMOS level voltages such as H

≥ VCC − 0.2 V, L ≤ 0.2 V.

Parameter

Symbol

Condition

Value

Unit

Min

Typ

Max

Input Leakage Current

|ILI|

VIN = 0 V to VCC

⎯⎯

TBD

μA

Output Leakage Current

|ILO|

VOUT

= 0 V to VCC,

CE1

= VIH or OE = VIH

⎯⎯

TBD

μA

Operating Power Supply

Current

ICC

CE1

= 0.2 V, CE2 = VCC−0.2 V,

Iout

= 0 mA*1

⎯

TBD

mA

Standby Current

ISB

CE1

≥ VCC−0.2 V

⎯

TBD

μA

CE2

≤ 0.2 V*2

OE

≥ VCC−0.2 V, WE ≥ VCC−0.2 V*2

High Level Output Voltage

VOH

IOH

= −1.0 mA

VCC

×

0.8

⎯⎯

V

Low Level Output Voltage

VOL

IOL

= 2.0 mA

⎯⎯

0.4

V

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