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MB85R1001A Datasheet(PDF) 10 Page - Fujitsu Component Limited. |
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MB85R1001A Datasheet(HTML) 10 Page - Fujitsu Component Limited. |
10 / 16 page MB85R1001A 10 DS501-00003-0v01-E ■ POWER ON/OFF SEQUENCE (within recommended operating conditions) ■ NOTES ON USE After the IR reflow completed, it is not guaranteed to save the data written prior to the IR reflow. Parameter Symbol Value Unit Min Typ Max CE1 level hold time for Power OFF tpd 85 ⎯⎯ ns CE1 level hold time for Power ON tpu 85 ⎯⎯ ns Power supply rising time tr 0.05 ⎯ 200 ms CE1 > VCC × 0.8* CE1 : Don't Care CE1 > VCC × 0.8* tpu tr tpd VCC CE2 3.0 V 1.0 V VIH (Min) VIL (Max) 0 V CE1 CE1 VCC CE2 3.0 V 1.0 V VIH (Min) VIL (Max) 0 V * : CE1 (Max) < VCC + 0.5 V Notes: • Use either of CE1 or CE2, or both for disable control of the device. • Because turning the power-on from an intermediate level cause malfunction, when the power is turned on, VCC is required to be started from 0 V. • If the device does not operate within the specified conditions of read cycle, write cycle, power on/off sequence, memory data can not be guaranteed. • When turning the power on or off, it is recommended that CE2 is connected to ground to prevent unexpected writing. CE2 ≤ 0.2 V |
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