2N3906 datasheet(1/4 Pages) KEC

Part #	2N3906

Description	EPITAXIAL PLANAR PNP TRANSISTOR

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Manufacturer	KEC [KEC(Korea Electronics)]

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2002. 9. 12

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SEMICONDUCTOR

TECHNICAL DATA

2N3906

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 2

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

Low Leakage Current

: ICEX=-50nA(Max.), IBL=-50nA(Max.)

@VCE=-30V, VEB=-3V.

Excellent DC Current Gain Linearity.

Low Saturation Voltage

: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.

Low Collector Output Capacitance

: Cob=4.5pF(Max.) @VCB=5V.

Complementary to 2N3904.

MAXIMUM RATING (Ta=25

)

TO-92

DIM MILLIMETERS

A

B

C

D

F

G

H

J

K

L

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

14.00 0.50

0.55 MAX

2.30

D

1

2 3

B

K

G

H

F

E

C

E

N

0.45 MAX

M

1.00

N

1. EMITTER

3. COLLECTOR

2. BASE

+_

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-40

V

Collector-Emitter Voltage

VCEO

-40

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-200

mA

Base Current

IB

-50

mA

Collector Power

Dissipation

Ta=25

PC

625

mW

Tc=25

1.5

W

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55

150

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