2008. 5. 27

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SEMICONDUCTOR

TECHNICAL DATA

KMB4D5DN60QA

Dual N-Ch Trench MOSFET

Revision No : 0

GENERAL DESCRIPTION

This Trench MOSFET has better characteristics, such as fast switching time, low

on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly

suitable for load switch and Back light inverter.

FEATURES

Drain-Source ON Resistance.

MOSFET Maximum Ratings (Ta=25

Unless otherwise noted)

B2

G

H

B1

1

4

5

8

A

P

D

L

T

FLP-8

0.20+0.1/-0.05

T

P

1.27

MILLIMETERS

DIM

A

4.85

0.2

+

_

B1

3.94

0.2

+

_

B2

6.02

0.3

+

_

D

0.4

0.1

+

_

G

0.15+0.1/-0.05

H

1.63

0.2

+

_

L

0.65

0.2

+

_

Note> *Surface Mounted on 1”

1” FR4 Board, t

10sec.

1

2

3

4

8

7

6

5

1

2

3

4

8

7

6

5

KMB4D5DN

60QA

PIN CONNECTION (TOP VIEW)

CHARACTERISTIC

SYMBOL PATING

UNIT

Drain Source Voltage

60

V

Gate Source Voltage

20

V

Drain Current

DC@Ta=25

4.5

A

Pulsed

20

A

Drain Source Diode Forward Current

3

A

Drain Power Dissipation

@Ta=25

2

W

Maximum Junction Temperature

150

Storage Temperature Range

-55~150

Thermal Resistance, Junction to Ambient

62.5

/W