2008. 3. 21

1/5

SEMICONDUCTOR

TECHNICAL DATA

KMB6D0DN30QA

Dual N-Ch Trench MOSFET

Revision No : 1

GENERAL DESCRIPTION

This Trench MOSFET has better characteristics, such as fast switching

time, low on resistance, low gate charge and excellent avalanche

characteristics. It is mainly suitable for portable equipment and DC-DC

Converter Applications.

FEATURES

Drain-Source ON Resistance.

Super High Dense Cell Design

High Power and Current Handing Capability

MAXIMUM RATING (Ta=25

Unless otherwise noted)

PIN CONNECTION (TOP VIEW)

1

2

3

4

8

7

6

5

S1

G1

S2

G2

D1

D1

D2

D2

1

2

3

4

8

7

6

5

Note> *Surface Mounted on FR4 Board, t

10sec.

B2

G

H

B1

1

4

5

8

A

P

D

L

T

FLP-8

0.20+0.1/-0.05

T

P

1.27

MILLIMETERS

DIM

A

4.85

0.2

+

_

B1

3.94

0.2

+

_

B2

6.02

0.3

+

_

D

0.4

0.1

+

_

G

0.15+0.1/-0.05

H

1.63

0.2

+

_

L

0.65

0.2

+

_

CHARACTERISTIC

SYMBOL

PATING

UNIT

Drain Source Voltage

30

V

Gate Source Voltage

20

V

Drain Current

DC

6

A

Pulsed

30

A

Drain Source Diode Forward Current

1.7

A

Drain Power Dissipation

25

2

W

Maximum Junction Temperature

150

Storage Temperature Range

-50~150

Thermal Resistance, Junction to Ambient

62.5

/W

KMB6D0DN

30QA