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FMH11N90E Datasheet(PDF) 2 Page - Fuji Electric |
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FMH11N90E Datasheet(HTML) 2 Page - Fuji Electric |
2 / 5 page 2 FMH11N90E 2 FUJI POWER MOSFET 0.1 1 10 100 0.1 1 10 100 ID [A] Typical Transconductance gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25 °C 0 25 50 75 100 125 150 0 50 100 150 200 250 300 Allowable Power Dissipation PD=f(Tc) Tc [°C] 10 -1 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 t PD Power loss waveform : Square waveform t PD t PD Power loss waveform : Square waveform VDS [V] Safe Operating Area I D=f(VDS):Duty=0(Single pulse),Tc=25 °c t= 1μs 10μs 1ms 100μs 0 4 8 12 16 20 24 0 5 10 15 20 10V 6.0V 7.0V 6.5V VDS [V] Typical Output Characteristics ID=f(VDS):80 μs pulse test,Tch=25 °C VGS=5.5V 0 1 2 3 4 5 6 7 8 9 10 0.1 1 10 100 VGS[V] Typical Transfer Characteristic ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25 °C 0 5 10 15 20 0.6 0.8 1.0 1.2 1.4 1.6 1.8 20V 6V ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 μs pulse test,Tch=25 °C 10V 7V 6.5V VGS=5.5V |
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