2008. 9. 10

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SEMICONDUCTOR

TECHNICAL DATA

PG05DXTET

TVS Diode for ESD

Protection in Portable Electronics

Revision No : 3

Protection in Portable Electronics Applications.

FEATURES

30 Watts peak pulse power (tp=8/20 s)

Transient protection for data lines to

IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)

Small package for use in portable electronics.

Suitable replacement for Multi-Layer Varistors in ESD protection applications.

Protects one I/O or power line.

Low clamping voltage.

Low leakage current.

APPLICATIONS

Cell phone handsets and accessories.

Microprocessor based equipment.

Personal digital assistants (PDA’s)

Notebooks, desktops, & servers.

Portable instrumentation.

Pagers peripherals.

MAXIMUM RATING (Ta=25

)

DIM

MILLIMETERS

A

A1

B1

C

TESV

1.6 0.05

1.0 0.05

1.6 0.05

1.2 0.05

0.50

0.2 0.05

0.5 0.05

0.12 0.05

B

D

H

J

B1

B

1

2

3

5

4

P

P

P5

+

_

+

_

+

_

+

_

+

_

+

_

+

_

1. NC

2. COMMON ANODE

3. (TVS) D1 CATHODE

4. (TVS) D2 CATHODE

5. (TVS) D3 CATHODE

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Peak Pulse Power (tp=8/20 s)

30

W

Junction Temperature

150

Storage Temperature

-55

150

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Reverse Stand-Off Voltage

-

-

-

5

V

Reverse Breakdown Voltage

6.47

-

7.14

V

Reverse Leakage Current

-

-

1

A

Junction Capacitance

-

12

15

pF

Marking

12

3

4

5

D2

D3

D1

TF

Type Name

Lot No.