2009. 10. 26

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SEMICONDUCTOR

TECHNICAL DATA

KMB054N40DC

N-Ch Trench MOSFET

Revision No : 0

General Description

This Trench MOSFET has better characteristics, such as fast switching

time, low on resistance, low gate charge and excellent avalanche

characteristics. It is mainly suitable for Back-light Inverter and Power

Supply.

FEATURES

Low Drain-Source ON Resistance.

Super High Dense Cell Design.

High Power and Current Handling Capability.

MAXIMUM RATING (Ta=25

Unless otherwise Noted)

PIN CONNECTION (TOP VIEW)

GS

D

1

2

3

1

2

3

DPAK (1)

DIM MILLIMETERS

A

A

B

B

C

C

D

D

F

FF

H

G

K

G

J

L

K

L

1. GATE

2. DRAIN

3. SOURCE

M

0.96 MAX

0.90 MAX

E

E

M

N

H

0.70 MIN

N

12

3

6.60

0.20

+

_

6.10 0.20

+

_

5.34

0.30

+

_

0.70 0.20

+

_

2.70

0.15

+

_

2.30 0.10

+

_

1.80 0.20

+

_

0.50

0.10

+

_

2.30 0.10

+

_

0.50 0.10

+

_

J

KMB

054N40

DC

Marking

Type Name

Lot No

Note 2) Surface Mounted on 1”

1” Pad of 2 oz copper.

CHARACTERISTIC

SYMBOL

N-Ch

UNIT

Drain-Source Voltage

40

V

Gate-Source Voltage

20

V

Drain Current

(Note1)

54

A

Pulsed

(Note2)

100

Drain-Source-Diode Forward Current

100

A

Drain Power Dissipation

(Note1)

45

W

@Ta=25

(Note2)

3.1

Maximum Junction Temperature

150

Storage Temperature Range

-55

150

Thermal Resistance, Junction to Case

(Note1)

2.8

/W

Thermal Resistance, Junction to Ambient (Note2)

40

/W