DN030 datasheet(1/4 Pages) KODENSHI

Part #	DN030

Description	Extremely low collector-to-emitter saturation voltage

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Manufacturer	KODENSHI [KODENSHI_AUK CORP.]

Direct Link	http://www.kodenshi.co.kr

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KSD-T0A002-000

1

DN030

NPN Silicon Transistor

PIN Connection

C

B

E

TO-92

Features

• Extremely low collector-to-emitter

saturation voltage

( VCE(SAT)= 0.1V Typ. @IC/IB=100mA/10mA)

• Suitable for low voltage large current drivers

• Complementary pair with DP030

• Switching Application

Ordering Information

Type NO.

Marking

Package Code

DN030

DNO30

TO-92

Absolute maximum ratings

(Ta=25

°C)

Characteristic

Symbol

Ratings

Unit

Collector-Base voltage

VCBO

15

V

Collector-Emitter voltage

VCEO

12

V

Emitter-Base voltage

VEBO

5

V

Collector current

IC

300

mA

Collector dissipation

PC

625

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

-55~150

°C

Electrical Characteristics

(Ta=25

°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Collector-Base breakdown voltage

BVCBO

IC=50μA, IE=0

15

-

V

Collector-Emitter breakdown voltage

BVCEO

IC=1mA, IB=0

12

-

V

Emitter-Base breakdown voltage

BVEBO

IE=50μA, IC=0

5

-

V

Collector cut-off current

ICBO

VCB=12V, IE=0

-

0.1

μA

Emitter cut-off current

IEBO

VEB=5V, IC=0

-

0.1

μA

hFE1

VCE=1V, IC=100mA

200

-

450

-

DC current gain

hFE2

VCE=1V, IC=300mA

70

-

VCE(sat1)

IC=100mA, IB=10mA

-

0.2

V

Collector-Emitter saturation voltage

VCE(sat2)

IC=300mA, IB=30mA

-

0.5

V

VBE(sat1)

IC=100mA, IB=10mA

-

1.2

V

Base-Emitter saturation voltage

VBE(sat2)

IC=300mA, IB=30mA

-

1.7

V

Transition frequency

fT

VCE=5V, IC=10mA

-

300

-

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

-

3

-

PF

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DN030 Datasheet(PDF) 1 Page - KODENSHI_AUK CORP.

DN030 Datasheet(HTML) 1 Page - KODENSHI_AUK CORP.

Similar Part No. - DN030

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