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2N3903 Datasheet(PDF) 2 Page - ON Semiconductor |
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2N3903 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page 2N3903, 2N3904 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL − 50 nAdc Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX − 50 nAdc ON CHARACTERISTICS DC Current Gain (Note 2) (IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N3903 2N3904 (IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3903 2N3904 (IC = 10 mAdc, VCE = 1.0 Vdc) 2N3903 2N3904 (IC = 50 mAdc, VCE = 1.0 Vdc) 2N3903 2N3904 (IC = 100 mAdc, VCE = 1.0 Vdc) 2N3903 2N3904 hFE 20 40 35 70 50 100 30 60 15 30 − − − − 150 300 − − − − − Collector−Emitter Saturation Voltage (Note 2) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc VCE(sat) − − 0.2 0.3 Vdc Base −Emitter Saturation Voltage (Note 2) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) 0.65 − 0.85 0.95 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N3903 2N3904 fT 250 300 − − MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hie 1.0 1.0 8.0 10 k W Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hre 0.1 0.5 5.0 8.0 X 10−4 Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hfe 50 100 200 400 − Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 40 mmhos Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k W, f = 1.0 kHz) 2N3903 2N3904 NF − − 6.0 5.0 dB SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) td − 35 ns Rise Time tr − 35 ns Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc, 2N3903 IB1 = IB2 = 1.0 mAdc) 2N3904 ts − − 175 200 ns Fall Time tf − 50 ns 2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%. |
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