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MGF0917A Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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MGF0917A Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 4 page  < High-power GaAs FET (small signal gain stage) > MGF0917A L & S BAND / 0.25W SMD non - matched Publication Date : Apr., 2011 2 MGF0917A TYPICAL CHARACTERISTICS Po,Gp,PAE vs.Pin 0 5 10 15 20 25 30 -15 -10 -5 0 5 10 Pin(dBm) 0 10 20 30 40 50 60 Vds=10V Id(off)=75mA f=1.9GHz Po Gp PAE Pi(SCL) vs.Po(SCL),IM3 -20 -15 -10 -5 0 5 10 15 20 25 30 -20 -15 -10 -5 0 5 10 15 Pin(SCL)(dBm) -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 VD=10V ID=75mA f1=1.90GHz f2=1.91GHz Po IM3 |
Similar Part No. - MGF0917A |
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Similar Description - MGF0917A |
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