Publication Date : Apr., 2011

1

< C band internally matched power GaAs FET >

MGFC36V3742A

3.7 – 4.2 GHz BAND / 4W

DESCRIPTION

The MGFC36V3742A is an internally impedance-matched

GaAs power FET especially designed for use in 3.7 – 4.2

GHz band amplifiers. The hermetically sealed metal-ceramic

package guarantees high reliability.

FEATURES

Class A operation

Internally matched to 50(ohm) system

 High output power

P1dB=4W (TYP.) @f=3.7 – 4.2GHz

 High power gain

GLP=12.5dB (TYP.) @f=3.7 – 4.2GHz

 High power added efficiency

P.A.E.=33% (TYP.) @f=3.7 – 4.2GHz

 Low distortion [ item -51]

IM3=-45dBc (TYP.) @Po=25dBm S.C.L.

APPLICATION

 item 01 : 3.7 – 4.2 GHz band power amplifier

 item 51 : 3.7 – 4.2 GHz band digital radio communication

QUALITY

 IG

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=1.2A  RG=100ohm

Refer to Bias Procedure

Symbol

Parameter

Ratings

Unit

VGDO

Gate to drain breakdown voltage

-15

V

VGSO

Gate to source breakdown voltage

-15

V

ID

Drain current

3.75

A

IGR

Reverse gate current

-10

mA

IGF

Forward gate current

21

mA

PT *1

Total power dissipation

25

W

Tch

Cannel temperature

175

C

Tstg

Storage temperature

-65 to +175

C

*1 : Tc=25

C

Symbol

Parameter

Test conditions

Limits

Unit

Min.

Typ.

Max.

IDSS

Saturated drain current

VDS=3V,VGS=0V

-

-

3.75

A

gm

Transconductance

VDS=3V,ID=1.1A

-

1

-

S

VGS(off)

Gate to source cut-off voltage

VDS=3V,ID=10mA

-

-

-4.5

V

P1dB

Output power at 1dB gain compression

35

37

-

dBm

GLP

Linear Power Gain

10

12.5

-

dB

ID

Drain current

-

-

1.8

A

P.A.E.

Power added efficiency

-

33

-

%

3

-42

-45

-

dBc

Rth(ch-c) *3

Thermal resistance

VDS=10V,ID(RF off)=1.2A

f=3.7 – 4.2GHz

-

5

6

C/W

*2 :Item -51,2 tone test, Po=25dBm Single Carrier Level, f=4.2GHz, Delta f=10MHz

*3 :Channel-case

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum

effort into making semiconductor products better

and more reliable , but there is always the

possibility that trouble may occur with them.

Trouble with semiconductors may lead to personal

injury , fire or property damage. Remember to give

due consideration to safety when making your

circuit designs , with appropriate measure such

as (I) placement of substitutive , auxiliary circuits ,

(ii) use of non-flammable material or (iii) prevention

against any malfunction or mishap.

12.0

21.0 +/-0.3

10.7

(1)

17.0 +/-0.2

GF-8

(2)

OUTLINE DRAWING

(1) GATE

(2) SOURCE (FLANGE)

(3) DRAIN

R-1 .6

(3)

(2)

0.6 +/-0.15

Unit : millimeters