BD241C_07 datasheet(2/6 Pages) ONSEMI

Part #	BD241C

Description	Complementary Silicon Plastic Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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BD241C (NPN), BD242B (PNP), BD242C (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (Note 1)

(IC = 30 mAdc, IB = 0)

BD242B

BD241C, BD242C

VCEO

80

100

Vdc

Collector Cutoff Current

(VCE = 50 Vdc, IB = 0)

BD242B

(VCE = 60 Vdc, IB = 0)

BD241C, BD242C

ICEO

0.3

mAdc

Collector Cutoff Current

(VCE = 80 Vdc, VEB = 0)

BD242B

(VCE = 100 Vdc, VEB = 0)

BD241C, BD242C

ICES

200

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

1.0

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc)

(IC = 3.0 Adc, VCE = 4.0 Vdc)

hFE

25

10

Collector-Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 0.6 Adc)

VCE(sat)

1.2

Vdc

Base-Emitter On Voltage

(IC = 3.0 Adc, VCE = 4.0 Vdc)

VBE(on)

1.8

Vdc

DYNAMIC CHARACTERISTICS

Current Gain - Bandwidth Product (Note 2)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

fT

3.0

MHz

Small-Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

20

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

2. fT = |hfe| • ftest.

40

30

20

10

0

20

40

60

80

100

120

140

160

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

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