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BF422 Datasheet(PDF) 1 Page - ON Semiconductor |
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BF422 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2010 September, 2010 − Rev. 1 Publication Order Number: BF422/D 1 BF422 High Voltage Transistors NPN Silicon Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 250 Vdc Collector−Base Voltage VCBO 250 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 50 mAdc Collector Current − Peak ICM 100 mA Total Device Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD 830 6.6 mW mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 150 °C/W Thermal Resistance, Junction−to−Lead RqJL 68 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted on a FR4 board with 200 mm2 of 1 oz copper and lead length of 5 mm. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com BF422 = Device Code A = Assembly Location Y = Year WW = Work Week G =Pb−Free Package TO−92 (TO−226AA) CASE 29−11 STYLE 14 BF422 AYWW G G Device Package Shipping† ORDERING INFORMATION BF422G TO−92 (Pb−Free) 5000 Units/Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. COLLECTOR 2 3 BASE 1 EMITTER (Note: Microdot may be in either location) MARKING DIAGRAM 1 2 3 1 2 BENT LEAD TAPE & REEL AMMO PACK STRAIGHT LEAD BULK PACK 3 |
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Similar Description - BF422_10 |
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