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DA121TT1G Datasheet(PDF) 2 Page - ON Semiconductor |
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DA121TT1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page DA121TT1G http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA =25C unless otherwise noted) Characteristic Symbol Min Max Unit Forward Voltage -- (IF =1.0 mA) (IF =10 mA) (IF =50 mA) (IF = 150 mA) VF -- -- -- -- 715 866 1000 1250 mV Reverse Current -- (VR =75 V) (VR =75 V, TJ = 150C) (VR =25 V, TJ = 150C) IR -- -- -- 1.0 50 30 mA Capacitance -- (VR = 0,f= 1.0MHz) CD -- 2.0 pF Reverse Recovery Time -- (IF =IR =10 mA, RL =50 Ω) (Figure 1) trr -- 6.0 ns Stored Charge -- (IF = 10mAtoVR =6.0 V, RL = 500 Ω) (Figure 2) QS -- 45 PC Forward Recovery Voltage -- (IF =10 mA, tr = 20ns) (Figure3) VFR -- 1.75 V Figure 1. Reverse Recovery Time Equivalent Test Circuit Figure 2. Recovery Charge Equivalent Test Circuit VF 1ns MAX 90% 10% t 100 ns tif trr Irr 500 Ω DUT 50 Ω DUTY CYCLE = 2% Vf 90% 10% 20 ns MAX t 400 ns VC VCM t VCM = Qa C 500 Ω DUT BAW62 D1 243 pF 100 KΩ DUTY CYCLE = 2% OSCILLOSCOPE R 10 MΩ C 7pF Figure 3. Forward Recovery Voltage Equivalent Test Circuit V 120 ns t 2ns MAX 10% 90% V Vfr 1KΩ 450 Ω 50 Ω DUT DUTY CYCLE = 2% |
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