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DA121TT1G Datasheet(PDF) 2 Page - ON Semiconductor

Part # DA121TT1G
Description  Silicon Switching Diode
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

DA121TT1G Datasheet(HTML) 2 Page - ON Semiconductor

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DA121TT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA =25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Forward Voltage --
(IF =1.0 mA)
(IF =10 mA)
(IF =50 mA)
(IF = 150 mA)
VF
--
--
--
--
715
866
1000
1250
mV
Reverse Current --
(VR =75 V)
(VR =75 V, TJ = 150C)
(VR =25 V, TJ = 150C)
IR
--
--
--
1.0
50
30
mA
Capacitance -- (VR = 0,f= 1.0MHz)
CD
--
2.0
pF
Reverse Recovery Time -- (IF =IR =10 mA, RL =50 Ω) (Figure 1)
trr
--
6.0
ns
Stored Charge -- (IF = 10mAtoVR =6.0 V, RL = 500 Ω) (Figure 2)
QS
--
45
PC
Forward Recovery Voltage -- (IF =10 mA, tr = 20ns) (Figure3)
VFR
--
1.75
V
Figure 1. Reverse Recovery Time Equivalent Test Circuit
Figure 2. Recovery Charge Equivalent Test Circuit
VF
1ns MAX
90%
10%
t
100 ns
tif
trr
Irr
500 Ω
DUT
50 Ω
DUTY CYCLE = 2%
Vf
90%
10%
20 ns MAX
t
400 ns
VC
VCM
t
VCM =
Qa
C
500 Ω DUT
BAW62
D1
243 pF
100 KΩ
DUTY CYCLE = 2%
OSCILLOSCOPE
R  10 MΩ
C  7pF
Figure 3. Forward Recovery Voltage Equivalent Test Circuit
V
120 ns
t
2ns MAX
10%
90%
V
Vfr
1KΩ
450 Ω
50 Ω
DUT
DUTY CYCLE = 2%


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