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MJE5730 Datasheet(PDF) 1 Page - ON Semiconductor

Part # MJE5730
Description  High Voltage PNP Silicon Plastic Power Transistors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJE5730 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 5
1
Publication Order Number:
MJE5730/D
MJE5730, MJE5731,
MJE5731A
High Voltage PNP Silicon
Plastic Power Transistors
These devices are designed for line operated audio output amplifier,
SWITCHMODE
t power supply drivers and other switching
applications.
Features
300 V to 400 V (Min) − VCEO(sus)
1.0 A Rated Collector Current
Popular TO−220 Plastic Package
PNP Complements to the TIP47 thru TIP50 Series
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
MJE5730
MJE5731
MJE5731A
VCEO
300
350
375
Vdc
Collector−Base Voltage
MJE5730
MJE5731
MJE5731A
VCB
300
350
375
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
Collector Current
− Continuous
− Peak
IC
ICM
1.0
3.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25
°C
PD
40
0.32
W
W/
_C
Total Device Dissipation @ TC = 25_C
Derate above 25
°C
PD
2.0
0.016
W
W/
_C
Unclamped Inducting Load Energy
(See Figure 10)
E
20
mJ
Operating and Storage Junction
Temperature Range
TJ, Tstg
−65 to +150
_C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
3.125
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
1.0 AMPERE
POWER TRANSISTORS
PCP SILICON
300−350−400 VOLTS
50 WATTS
TO−220AB
CASE 221A−09
STYLE 1
1
http://onsemi.com
MARKING DIAGRAM
2
3
MJE573x
= Device Code
x = 0, 1, or 1A
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MJE573xG
AY WW
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION


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