© Semiconductor Components Industries, LLC, 2010

July, 2010 − Rev. 5

1

Publication Order Number:

MMBT6520LT1/D

MMBT6520LT1G

High Voltage Transistor

PNP Silicon

Features

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

−350

Vdc

Collector−Base Voltage

−350

Vdc

Emitter−Base Voltage

−5.0

Vdc

Base Current

−250

mA

Collector Current − Continuous

−500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board,

Derate above 25°C

225

1.8

mW

mW/°C

Thermal Resistance, Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina

Derate above 25°C

300

2.4

mW

mW/°C

Thermal Resistance, Junction−to−Ambient

417

°C/W

Junction and Storage Temperature

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

http://onsemi.com

SOT−23 (TO−236)

CASE 318

STYLE 6

Device

Package

ORDERING INFORMATION

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MMBT6520LT1G

SOT−23

(Pb−Free)

3,000 / Tape & Reel

1

2

3

MMBT6520LT3G

SOT−23

(Pb−Free)

10,000/Tape & Reel

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

1

2Z M G

G

2Z = Device Code

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAM

COLLECTOR

3

1

BASE

2

EMITTER