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MPSW42G Datasheet(PDF) 2 Page - ON Semiconductor |
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MPSW42G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page MPSW42 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 300 − Vdc Collector−Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 300 − Vdc Emitter−Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc Collector Cutoff Current (VCB = 200 Vdc, IE = 0) ICBO − 0.1 mAdc Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO − 0.1 mAdc ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) hFE 25 40 40 − − − − Collector−Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VCE(sat) − 0.5 Vdc Base−Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VBE(sat) − 0.9 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) fT 50 − MHz Collector Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Ccb − 3.0 pF 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. |
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