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GL4800 Datasheet(PDF) 1 Page - Sharp Corporation

Part # GL4800
Description  Thin Type Infrared Emitting Diode
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Manufacturer  SHARP [Sharp Corporation]
Direct Link  http://sharp-world.com/
Logo SHARP - Sharp Corporation

GL4800 Datasheet(HTML) 1 Page - Sharp Corporation

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data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ”
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
GL4800
s Features
3. Radiant flux
4. Epoxy resin package
s Applications
1. Floppy disk drives
2. Optoelectronic switches
*1 Pulse width<=100
µ s, Duty ratio= 0.01
*2 For 3 seconds at the position of 1.8mm from the surface of resin edge.
Parameter
Symbol
Rating
Unit
Power dissipation
P
75
mW
Forward current
IF
50
mA
*1Peak forward current
I FM
1A
Reverse voltage
V R
6V
Operating temperature
T opr
- 25 to + 85
˚C
Storage temperature
T stg
- 40 to + 85
˚C
*2Soldering temperature
T sol
260
˚C
GL4800
1. Thin type ( Thickness : 1.5mm )
2. Beam angle (
∆θ : TYP. ± 30˚)
(
Φ
e
: MIN. 0.7mW at I F = 20mA )
1.6
2.54
0.8
0.7
2 - C0.5
s Outline Dimensions
(Unit : mm )
(Ta = 25˚C )
s Absolute Maximum Ratings
0.25
1
2
2
1
Parameter
Conditions
MIN.
TYP.
MAX.
Unit
Forward voltage
-
1.2
1.4
V
Peak forward voltage
-
3.0
4.0
V
Reverse current
-
-
10
µ A
Terminal capacitance
-
70
-
pF
Frequency response
-
-
300
-
kHz
Radiant flux
0.7
1.6
3.0
mW
Peak emission wavelength
-
950
-
nm
Half intensity wavelength
-
45
-
nm
s Electro-optical Characteristics
( Ta = 25˚C)
IF = 20mA
IF = 20mA
IF = 5mA
IF = 5mA
IFM = 0.5A
VR =3V
VR = 0, f = 1MHz
Symbol
V F
V FM
I R
Ct
f c
Φ e
λ p
∆λ
Pink transparent
epoxy resin
1 Anode
2 Cathode
Diode
Thin Type Infrared Emitting
φ0.8
3.0 ± 0.2
1.5 ± 0.2
2 - 0.45
2 - 0.9


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