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BD9353MWV Datasheet(PDF) 4 Page - Rohm

Part # BD9353MWV
Description  Silicon Monolithic Integrated Circuit
Download  5 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

BD9353MWV Datasheet(HTML) 4 Page - Rohm

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REV. A
○Operation Notes
1.) Absolute maximum ratings
This product is produced with strict quality control. However, the IC may be destroyed if operated beyond its absolute
maximum ratings. If the device is destroyed by exceeding the recommended maximum ratings, the failure mode will be difficult
to determine. (E.g. short mode, open mode) Therefore, physical protection counter-measures (like fuse) should be implemented
when operating conditions beyond the absolute maximum ratings anticipated.
2.) GND potential
Make sure GND is connected at lowest potential. All pins except NON5, must not have voltage below GND. Also, NON5 pin must
not have voltage below - 0.3V on start up.
3.) Setting of heat
Make sure that power dissipation does not exceed maximum ratings.
4.) Pin short and mistake fitting
Avoid placing the IC near hot part of the PCB. This may cause damage to IC. Also make sure that the output-to-output and output
to GND condition will not happen because this may damage the IC.
5.) Actions in strong magnetic field
Exposing the IC within a strong magnetic field area may cause malfunction.
6.) Mutual impedance
Use short and wide wiring tracks for the main supply and ground to keep the mutual impedance as small as possible. Use inductor
and capacitor network to keep the ripple voltage minimum.
7.) Thermal shutdown circuit (TSD circuit)
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is designed only
to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not
continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is assumed.
8.) Rush current at the time of power supply injection.
An IC which has plural power supplies, or CMOS IC could have momentary rush current at the time of power supply injection.
Please take care about power supply coupling capacity and width of power Supply and GND pattern wiring.
9.) IC Terminal Input
This IC is a monolithic IC that has a P- board and P+ isolation for the purpose of keeping distance between elements. A P-N junction
is formed between the P-layer and the N-layer of each element, and various types of parasitic elements are then formed.
For example, an application where a resistor and a transistor are connected to a terminal (shown in Fig.15):
○When GND > (terminal A) at the resistor and GND > (terminal B) at the transistor (NPN), the P-N junction operates as
a parasitic diode.
○When GND > (terminal B) at the transistor (NPN), a parasitic NPN transistor operates as a result of the NHayers of other
elements in the proximity of the aforementioned parasitic diode.
Parasitic elements are structurally inevitable in the IC due to electric potential relationships. The operation of parasitic elements
Induces the interference of circuit operations, causing malfunctions and possibly the destruction of the IC. Please be careful not to
use the IC in a way that would cause parasitic elements to operate. For example, by applying a voltage that is lower than the
GND (P-board) to the input terminal.
Fig - 3 Simplified structure of a Bipolar IC
(TerminalA)
GND
Parasitic element
Parasitic
lt
(Terminal B)
Transistor (NPN)
GND
P-board
N
P
N
P
P
B
N
E
C
GND
P-board
N
P
N
N
P
P
(Terminal A)
Parasitic
element
Resistor


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