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REV. A

Structure

Silicon Monolithic Integrated Circuit

Product

Power Management LSI for MultiMedia LSI on Cellular

Type

BH6176GU

Functions

・1ch 500mA, high efficiency Step-down Converter. (16 steps adjustable VO by I2C)

・６-channel CMOS-type LDOs. (16 steps adjustable VO by I2C, 150mA×3, 300mA×３)

・LDO and Stepdown converter Power ON/OFF control enabled by I2C interface or external pin

・I2C compatible Interface. (Device address is “1001111”)

・Wafer Level CSP package(2.6mm×2.6mm) for space-constrained applications.

Absolute Maximum Ratings（Ta=25

C）

Parameter

Symbol

Rating

Unit

Maximum Supply Voltage (VBAT, PBAT)

VBATMAX

6.0

V

Maximum Supply Voltage (VUSB)

VUSBMAX

6.0

V

Maximum Supply Voltage (DVDD)

DVDDMAX

4.5

V

Maximum Input Voltage 1

(LX, FB, OUT1, OUT2, OUT3, OUT4, OUT5, OUT6,

EN_LD1, EN_LD2, EN_LD3, EN_LD4)

VINMAX1

VBAT + 0.3

V

Maximum Input Voltage 2

(NRST, CLK, DATA)

VINMAX2

DVDD + 0.3

V

Power Dissipation

Pd

900*

1

mW

Operating Temperature Range

Topr

-35 ～ +85

℃

Storage Temperature Range

Tstg

-55 ～ +125

℃

*1 This is the allowable loss of when it is mounted on a ROHM specification board 60mm×60mm.

To use at temperature higher than 25

C , derate 1% per 1C.

Recommended Operating Conditions (Ta=25

C)

Parameter

Symbol

Range

Unit

VBAT, PBAT Voltage

VBAT

*

2

2.20 ～ 5.50

V

VUSB Voltage

VUSB

*

2

2.20 ～ 5.50

V

DVDD Voltage

VDVDD

*

3

1.70 ～ 4.20

V

*2 Whenever the VBAT or PBAT or VUSB voltage is under the LDO, SWREG output voltage,

the LDO and SWREG output is not guaranteed to meet its published specifications.

*3 The DVDD Voltage must be under the Battery Voltage VBAT, PBAT at any times.

*This product is not especially designed to be protected from radioactivity.