R5009FNX datasheet(2/6 Pages) ROHM

Part #	R5009FNX

Description	10V Drive Nch MOSFET

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Manufacturer	ROHM [Rohm]

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Data Sheet

R5009FNX



Electrical characteristics (Ta = 25

C)

Symbol

Min.

Typ.

Max.

Unit

Gate-source leakage

IGSS

--

100

nA VGS=±30V, VDS=0V

Drain-source breakdown voltage V(BR)DSS

500

-

V

ID=1mA, VGS=0V

Zero gate voltage drain current

IDSS

-

100

uA VDS=500V, VGS=0V

Gate threshold voltage

VGS (th)

2.0

-

4.0

V

VDS=10V, ID=1mA

Forward transfer admittance

l Yfs l

4.0

5.7

-

S

ID=4.5A, VDS=10V

Input capacitance

Ciss

-

630

-

pF

VDS=25V

Output capacitance

Coss

-

400

-

pF

VGS=0V

Reverse transfer capacitance

Crss

-

25

-

pF

f=1MHz

Turn-on delay time

td(on)

-

24

-

ns

ID=4.5A, VDD 250V

Rise time

tr

-

20

-

ns

VGS=10V

Turn-off delay time

td(off)

-

50

-

ns

RL=55.6

Fall time

tf

-

40

-

ns

RG=10

Total gate charge

Qg

-

18

-

nC ID=9.0A, VDD 250V

Gate-source charge

Qgs

-

3.5

-

nC VGS=10V

Gate-drain charge

Qgd

-

5.5

-

nC

*Pulsed



Body diode characteristics (Source-Drain) (Ta = 25

C)

Symbol

Min.

Typ.

Max. Unit

Forward Voltage

VSD

-

1.5

V

Is=9.0A, VGS=0V

Reverse Recovery Time

trr

48

78

108

ns

*Pulsed

Is=9.0A, di/dt=100A/s

Conditions

Parameter

Conditions



Parameter

Static drain-source on-state

resistance

RDS (on)

ID=4.5A, VGS=10V

-

0.65

0.84

*

2/5

2011.07 - Rev.A

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