SiC Schottky Barrier Diode

SCS110AG

Applications

Dimensions

(Unit : mm)

Structure

Switching power supply

Features

1)Shorter recovery time

2)Reduced temperature dependence

3)High-speed switching possible

Construction

Silicon carbide epitaxial planer type

Absolute maximum ratings

(Ta=25°C)

Symbol

Unit

V

V

A

A

Tj

°C

Tstg

°C

Electrical characteristics

(Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Conditions

600

-

-

V

-

1.5

1.7

V

-

2.0

200

-

430

-

pF

-

47

-

pF

Qc

-

16

-

nC

tc

-

15

-

ns

-

-

1.8

°C/W

junction to case

Forward voltage

Reverse current

Thermal resistance

Total capacitance

C

Total capacitive charge

Switching time

Storage temperature

55 to 150

(*1)Tc=117°C max

(*2)PW=8.3ms sinusoidal

Parameter

DC blocking voltage

Continuous forward current (*1)

10

Forward current surge peak (60Hz・1cyc) (*2)

40

Junction temperature

150

Parameter

Limits

Reverse voltage (repetitive)

600

Reverse voltage (DC)

600

ROHM : ＴO-220AC

1/3

2011.04 - Rev.A

www.rohm.com

©20

11 ROHM Co., Ltd. All rights reserved.