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BC636-16 Datasheet(PDF) 1 Page - Micro Commercial Components |
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BC636-16 Datasheet(HTML) 1 Page - Micro Commercial Components |
1 / 2 page BC636-16 BC638 BC640 PNP Epitaxial Silicon Transistors Features • Through Hole Package • Capable of 830mWatts of Power Dissipation Maximum Ratings Symbol Rating Value Unit VCEO Collector-Emitter Voltage BC636 -45 V BC638 -60 V BC640 -100 V VCBO Collector-Base Voltage BC636 -45 V BC638 -60 V BC640 -80 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -1.0 A IB Base Current -100 mA TJ Junction Temperature -65 to +150 ℃ TSTG Storage Temperature -65 to +150 ℃ Electrical Characteristics @ 25 °C Unless Otherwise Specified Symbol Parameter Min Typ Max Unit OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage (IC=-1mAdc,IB=0) BC636 -45 --- --- Vdc BC638 -60 Vdc BC640 -80 Vdc ICBO Collector Cutoff Current (VCB=-30Vdc, IE=0) --- --- -0.1 μAdc IEBO Emitter Cutoff Current (VEB=-5.0Vdc, IC=0) --- --- -0.1 μAdc hFE(1) DC Current Gain (VCE=-2Vdc, IC=-5mAdc) 40 --- --- hFE(2) DC Current Gain (VCE=-2Vdc, IC=-150mAdc) BC636-10 63 160 BC636-16,BC638 ,BC640 100 250 hFE(3) DC Current Gain (VCE=-2Vdc, IC=-500mAdc) 25 VCE(sat) Collector-Emitter Saturation Voltage (IC=-500mAdc,IB=-50mAdc) --- --- -0.5 Vdc VBE(on) Base-Emitter Voltage (IC=-500mAdc, VCE=-2Vdc) --- --- -1.0 Vdc fT Transition Frequency (VCE=-5.0Vdc, IC=-50mAdc, f=100MHz) 100 --- --- MHz BC636-10 TO-92 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .170 .190 4.33 4.83 B .170 .190 4.30 4.83 C .550 .590 13.97 14.97 D .010 .020 0.36 0.56 E .130 .160 3.30 3.96 G .010 .104 2.44 2.64 A E B C D G omponents 20736 Marilla Street Chatsworth !"# $% !"# MCC TM Micro Commercial Components Revision: 1 2011/01/01 www.mccsemi.com 1 of 2 • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 E C B |
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Similar Description - BC636-16 |
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