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74AUP2G125GN Datasheet(PDF) 11 Page - NXP Semiconductors |
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74AUP2G125GN Datasheet(HTML) 11 Page - NXP Semiconductors |
11 / 24 page 74AUP2G125 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 7 — 21 September 2010 11 of 24 NXP Semiconductors 74AUP2G125 Low-power dual buffer/line driver; 3-state [1] All typical values are measured at nominal VCC. [2] tpd is the same as tPLH and tPHL. [3] ten is the same as tPZH and tPZL. [4] tdis is the same as tPHZ and tPLZ. [5] CPD is used to determine the dynamic power dissipation (PD in μW). PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(C L × VCC 2 × f o) = sum of the outputs. tdis disable time nOE to nY; see Figure 9 [4] VCC = 0.8 V - 49.9 - - - - ns VCC = 1.1 V to 1.3 V 6.0 9.9 13.3 4.8 14.8 16.5 ns VCC = 1.4 V to 1.6 V 4.4 7.7 9.6 3.1 10.8 12.1 ns VCC = 1.65 V to 1.95 V 5.1 8.7 11.1 2.8 12.4 13.8 ns VCC = 2.3 V to 2.7 V 3.6 6.2 7.6 2.6 8.6 9.6 ns VCC = 3.0 V to 3.6 V 5.2 8.7 10.5 2.6 10.8 13.1 ns CL = 5 pF, 10 pF, 15 pF and 30 pF CPD power dissipation capacitance output enabled; fi = 1 MHz; VI =GND to VCC [5] VCC = 0.8 V - 2.7 - - - - pF VCC = 1.1 V to 1.3 V - 2.8 - - - - pF VCC = 1.4 V to 1.6 V - 2.9 - - - - pF VCC = 1.65 V to 1.95 V - 3.0 - - - - pF VCC = 2.3 V to 2.7 V - 3.6 - - - - pF VCC = 3.0 V to 3.6 V - 4.2 - - - - pF Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 10. Symbol Parameter Conditions 25 °C −40 °C to +125 °C Unit Min Typ[1] Max Min Max (85 °C) Max (125 °C) |
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