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IRF9240SMD Datasheet(PDF) 2 Page - Seme LAB |
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IRF9240SMD Datasheet(HTML) 2 Page - Seme LAB |
2 / 2 page IRF9240 IRFN9240 IRF9240SMD Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3345 Issue 2 Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Characteristic Test Conditions Min. Typ. Max. Unit –200 –2 –4 –100 100 –25 –1 –11 0.35 0.5 46 1200 570 81 28 60 3.0 15 4.5 38 35 85 85 65 5.0 12.5 Drain – Source Breakdown Voltage Gate Threshold Voltage Gate – Source Leakage Current (forward) Gate – Source Leakage Current (reverse) Zero Gate Voltage Drain Current On State Drain Current 1 Static Drain – Source On-State Resistance Forward Transconductance 1 Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Characteristic Min. Typ. Max. Unit 1.0 30 300 RθJC RθJA TL Junction to Case Junction to Ambient (TO-3 package only) Max. Lead Temperature 0.063 ” from case for 10 sec. (TO-3 package only) °C/W °C/W °C THERMAL CHARACTERISTICS Characteristic Test Conditions Min. Typ. Max. Unit –11 –44 –4.6 270 2.0 IS ISM VSD trr Qrr VGS = 0V , IS = – 11A Tcase = 25°C IF = –11A , dlF / dt = 100A/µs Tj = 25°C IF = –11A , dlF / dt = 100A/µs Tj = 25°C Continuous Source Current (Body Diode) Pulsed Source Current1 (Body Diode) Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge A V ns µC SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS VGS = 0V , ID = –1mA VDS = VGS , ID = –250µA VGS = –20V VGS = 20V VDS = -160V , VGS = 0V VDS = -160V VGS = 0V , Tcase = 125°C VDS > ID(ON) x RDS(ON) Max VGS = –10V VGS = –10V , ID = –7A VDS > ID(ON) x RDS(ON) Max ID = –7A VGS = 0V VDS = –25V f = 1MHz VGS = –10V ID = –11A VDS = -100V VDD = -100V ID = –11A ZO = 9.1Ω V V nA nA µA mA A Ω S pF nC ns nH nH 1) Pulse Test: Pulse Width < 300 µS , Duty Cycle ≤ 2% 2) Repetitive Rating: Pulse Width limited by maximum junction temperature. ELECTRICAL RATINGS (T case = 25°C unless otherwise stated) |
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