Turn on delay time

Ic=50A, Vcc=300V

Vge=+/15V,Rg=2.7Ω,Tvj=25C

Vge=+/-15V,Rg=2.7Ω,Tvj=125C

40

42

nsec

nsec

Rise time

Ic=50A, Vcc=300V

Vge=+/-15V,Rg=2.7Ω,Tvj=25C

Vge=+/-15V,Rg=2.7Ω,Tvj=125C

tr

9

10

nsec

nsec

Turn off delay time

Ic=50A, Vcc=300V

Vge=+/-15V,Rg=2.7Ω,Tvj=25C

Vge=+/-15V,Rg=2.7Ω,Tvj=125C

120

130

nsec

nsec

Fall time

Ic=50A, Vcc=300V

Vge=+/-15V,Rg=2.7Ω,Tvj=25C

Vge=+/-15V,Rg=2.7Ω,Tvj=125C

12

21

nsec

nsec

Turn energy loss per pulse

Ic=50A,Vce=300V,Vge=15V

Rge=2.7Ω,Tvj=125C,L=35nH

0.5

mJ

Turn off energy loss per pulse Ic=50A,Vce=300V, Vge=15V

Rge=Ω,Tvj=125C,L=35nH

1.0

mJ

SC Data

tp≤10µsec, Vge≤15V

Tvj≤125C,Vcc=300V,Vce(max)-

Vces-Lσdi/dT

225

A

Stray Module inductance

40

nH

Terminal-chip resistance

1.2

mΩ

Forward voltage

Ic=50A,Vge=0V, Tc=25C

Ic=50A,Vge=0V, Tc=125C

1.25

1.2

1.6 V

Peak reverse recovery current If=50A, -di/dt=2900A/µsec

Vce=300V,Vge=-10V,Tvj=25C

Vce=300V,Vge=-10V,Tvj=125C

88

92

A

Recovered charge

If=50A, -di/dt=2900A/µsec

Vce=600V,Vge=-10V,Tvj=25C

Vce=600V,Vge=-10V,Tvj=125C

Qr

3.4

5.6

µC

Reverse recovery energy

If=50A, -di/dt=2900A/µsec

Vce=600V,Vge=-10V,Tvj=25C

Vce=600V,Vge=-10V,Tvj=125C

1.5

mJ

mJ

Diode characteristics