ZVN2106B

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be

both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab

encourages customers to verify that datasheets are current before placing orders.

DOC 7927, ISSUE 1

FEATURES

•

Faster switching

•

Low Ciss

•

Integral Source-Drain Diode

•

High Input Impedance and High Gain

DESCRIPTION

This enhancement-mode (normally-off) vertical DMOS FET is

ideally suited to a wide range of switching and amplifying

applications where high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

High Reliability Screening options are available.

N–CHANNEL

ENHANCEMENT MODE

MOSFET

V

DSS

60V

I

D

1.2A

R

DS(on)

2.0

Ω

TO-39 PACKAGE (TO-205AD)

(Underside View)

PIN 1 – SOURCE

PIN 3 – DRAIN

PIN 2 – GATE

CASE – DRAIN

0.89

(0.035)

max.

12.70

(0.500)

min.

0.41 (0.016)

0.53 (0.021)

dia.

5.08 (0.200)

typ.

0.71 (0.028)

0.86 (0.034)

2.54

(0.100)

45°

6.10 (0.240)

6.60 (0.260)

8.51 (0.34)

9.40 (0.37)

7.75 (0.305)

8.51 (0.335)

1

2

3

0.74 (0.029)

1.14 (0.045)

MECHANICAL DATA

Dimensions in mm (inches)

V

DS

Drain - Source Voltage

60V

I

D

Drain Current

- Continuous (T

1.2A

- Continuous (T

0.45A

I

DM

Drain Current

8A

V

GS

Gate - Source Voltage

±20V

P

tot(1)

Total Power Dissipation at T

5W

De-rate Linearly above 25°C

0.040W/°C

P

tot(2)

Total Power Dissipation at T

700mW

T

Operating and Storage Junction Temperature Range

-55 to +150°C

THERMAL DATA

R

thj-c

Thermal Resistance Junction – Case

Max

20

°C/W

R

thj-amb

Thermal Resistance Junction - Ambient

Max

179

°C/W

NOTES:

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Pulse Test: Pulse Width

≤ 380µS, Duty Cycle , δ 2%